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University of York, Department of Electronic Engineering Nanotechnology PhD Projects, Programs & Scholarships

We have 6 University of York, Department of Electronic Engineering Nanotechnology PhD Projects, Programs & Scholarships

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  Atomic level structure and magnetic properties of MRAM
  Research Group: Intelligent Systems and Nanoscience
  Prof Y Xu
Applications accepted all year round

Funding Type

PhD Type

As a new generation solid-state memory technology, the Magnetic Radom Access Memory (MRAM) is one of the most promising technologies for data storage, which storages data as a spin state rather than electrical charge.
  Development of a quantum spin-current generator
  Research Group: Intelligent Systems and Nanoscience
  Prof A Hirohata
Applications accepted all year round

Funding Type

PhD Type

We plan to observe new quantum phenomena by measuring nanoscale spintronic devices at very low-temperature.
  Development of a spin transistor beyond CMOS
  Research Group: Intelligent Systems and Nanoscience
  Prof A Hirohata
Applications accepted all year round

Funding Type

PhD Type

Alongside with the Departmental research theme, "Advanced Computational Technologies," we seek a PhD student who is interested in developing a next-generation transistor using not electron charges but electron spins.
  Development of Spin based Transistors with 2D Materials
  Research Group: Intelligent Systems and Nanoscience
  Prof Y Xu
Applications accepted all year round

Funding Type

PhD Type

Over the past few decades, size of transistors has been tremendously reduced from a few centimetres to a few tens of nanometres. This trend in down scaling the device size has almost reached its ultimate physical limitation, challenging Moore’s Law which has been valid for almost half a century.
  Heusler alloy films for nano-spintronic devices
  Research Group: Intelligent Systems and Nanoscience
  Prof A Hirohata
Applications accepted all year round

Funding Type

PhD Type

Heusler-alloy films are theoretically predicted to show 100% spin polarisation and is therefore ideal to be used in spintronic devices [1],[2].
  Spintronics with Topological Semimetals
  Research Group: Intelligent Systems and Nanoscience
  Prof Y Xu
Applications accepted all year round

Funding Type

PhD Type

According to Moore’s law, the number of transistors in integrated circuits doubles approximately every two years. If this trend continues, the atomic length scales will be reached within several years.
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