University of Leeds Featured PhD Programmes
Norwich Research Park Featured PhD Programmes
Sheffield Hallam University Featured PhD Programmes
Norwich Research Park Featured PhD Programmes
The Hong Kong Polytechnic University Featured PhD Programmes

Atomic scale modelling of magnetic random access memory

This project is no longer listed on FindAPhD.com and may not be available.

Click here to search FindAPhD.com for PhD studentship opportunities
  • Full or part time
    Dr R Evans
  • Application Deadline
    No more applications being accepted
  • Awaiting Funding Decision/Possible External Funding
    Awaiting Funding Decision/Possible External Funding

About This PhD Project

Project Description

MRAM is a data storage device which utilises a magnetic material to store information, and is a potential replacement for current charge-based devices such as DRAM due to its non-volatility and low power consumption. MRAM technologies are particularly challenging due to the small dimensions of around 1nm thickness and the use of spin electronics for retrieving the stored information.

This project aims to develop a complete understanding of the material and device properties at the atomic scale in close collaboration with experimental research groups and industrial researchers and will combine molecular and spin dynamics with a model of spin transport dynamics.


FindAPhD. Copyright 2005-2019
All rights reserved.