Atomic scale modelling of magnetic random access memory

MRAM is a data storage device which utilises a magnetic material to store information, and is a potential replacement for current charge-based devices such as DRAM due to its non-volatility and low power consumption. MRAM technologies are particularly challenging due to the small dimensions of around 1nm thickness and the use of spin electronics for retrieving the stored information.

This project aims to develop a complete understanding of the material and device properties at the atomic scale in close collaboration with experimental research groups and industrial researchers and will combine molecular and spin dynamics with a model of spin transport dynamics.