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Development of a spin transistor beyond CMOS

   Department of Electronic Engineering

About the Project

Alongside with the Departmental research theme, "Advanced Computational Technologies," we seek a PhD student who is interested in developing a next-generation transistor using not electron charges but electron spins. Such a transistor can reduce electrical power consumption by >40% and can operate at >50% faster speed as compared with the current Si-based CMOS technology. To date, the group has developed a growth method to form an abrupt metal/semiconductor interface for the first time [1] and has also demonstrated a way to amplify a electron-spin flow in such a device [2]. A successful PhD candidate will utilise these techniques and will focus on developing a spin-based transistor concept. It is preferable that the candidate has some hands-on experience on thin film growth in an ultrahigh vacuum and/or nanometric scale device fabrication.

The devices will be grown using our ultrahigh vacuum molecular beam epitaxy (UHV-MBE) system in the Department, which can maintain an vacuum as low as 1.2x10-8 Pa. The devices will then be patterned in the state-of-the-art electron beam lithography system in Leeds, where we have 25% share. This system can pattern 7 nm feature with stitching and overlay accuracy of <1 and <7 nm, respectively. The successful devices will be measured by our transport measurement setup, which can handle signals up to GHz frequency and temperature down to 350 mK.

We have been active in the field of spintronics with many collaborators within the UK, EU and worldwide. We also work closely with the Department of Physics. PhD students are normally given an opportunity to present their work at the annual domestic Magnetism conference and at least once in an international conference, such as the International Conference on Magnetism or Magnetism and Magnetic Materials.

Entry requirements:
Candidates should have (or expect to obtain) a minimum of a UK upper second class honours degree (2.1) or equivalent in Electronic and Electrical Engineering, Physics, Computer Science, Mathematics, Music Technology or a closely related subject.

How to apply:
Applicants should apply via the University’s online application system at Please read the application guidance first so that you understand the various steps in the application process.

Funding Notes

This is a self-funded project and you will need to have sufficient funds in place (eg from scholarships, personal funds and/or other sources) to cover the tuition fees and living expenses for the duration of the research degree programme. Please check the Electronic Engineering website View Website for details about funding opportunities at York.


[1] L. R. Fleet et al., Physical Review B 87, 024401 (2013).
[2] R. M. Abdullah et al., Journal of Physics D: Applied Physics 47, 482001(FTC) (2014).

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