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Development of nanoporous GaN on Silicon substrate for optoelectronic devices

   Cardiff School of Physics and Astronomy

   Applications accepted all year round  Funded PhD Project (UK Students Only)

About the Project

Porous group III-Nitrides are emerging as compound semiconductors with novel properties and applications such as strain-free optical reflectors, chemical sensors and a key development pathway to device lift-off from the native substrates and remote epitaxy. Significant progress has been made in a decade across sensing and optoelectronic devices. Porous III-nitrides are formed widely using top-down fabrication methods such as electrochemical (EC) and photoelectrochemical (PE) etching, pore morphology is controlled via key parameters such as applied potential/bias, material doping density and illumination in case of PE etching. The pore morphology of spontaneously formed porous III-Nitrides is substrate temperature, group III and N fluxes. The bottom-up fabrication approach is contamination-free and the entire device such as light-emitting diodes, photodiode and lasers can be grown simply by changing the growth parameters in a single process run.

The project will involve:

·        Development of theoretical understanding of crystal structures, electronic structure, and optical properties of porous III-Nitrides.

·        Understanding of in-situ and ex-situ characterisation, growth mechanisms, design and fabrication of porous III-Nitrides.

·        Development of Porous III-Nitrides via bottom-up and top-bottom approaches.

·        The project will be developed in state-of-the-art research facilities which include molecular beam epitaxy (MBE), X-ray diffraction, Scanning electron microscopy and photoluminescence.

 Eligibility and how to apply:

The typical academic requirement is a minimum of a 2:1 physics or a relevant discipline.

Applicants whose first language is not English are normally expected to meet the minimum University requirements (e.g. 6.5 IELTS) (

Applicants should submit an application for Doctor of Philosophy in Physics and Astronomy via the Cardiff University webpages ( including:

• your academic CV

• a personal statement/covering letter

• two references, at least one of which should be academic

• Your degree certificates and transcripts to date.

In the "Research Proposal" section of your application, please specify the project title and supervisor of this project.

In the funding section, please select that you will not be self funding and write that the source of funding will be Cardiff University.

Once you have submitted your application please email to advise us of your application number which will begin "22".

Funding Notes

This fully-funded scholarship will cover the full cost of tuition fees and stipend at UKRI minimum (£15,609 per annum for 2021/22 and expected to increase in line with inflation for 2022/23).
This scholarship is open to UK/home fee paying students only.
For general enquiries regarding this funding, please contact
Ideally the successful applicant will start on 1st April 2022, but the supervisor is open to considering alternative start dates.

How good is research at Cardiff University in Physics?

Research output data provided by the Research Excellence Framework (REF)

Click here to see the results for all UK universities

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