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Development of novel III-V semiconductors for optoelectronic devices


   Cardiff School of Physics and Astronomy


About the Project

The project will be based on III-V semiconductors materials and devices. It will start with the basic understanding of material physics by familiarisation of ultra-high vacuum (UHV) growth technique and in-situ characterization and simulation of the electronic structure of the group III-Arsenide/Antimonide/Nitride). Followed by the advanced materials engineering/ simulation/design/fabrication of the optoelectronic devices.

The project will involve:

-         Development of theoretical understanding of the electronic structure of novel III-V semiconductors

-         Growth and in-situ characterisation of III-V thin films and nanostructures by Molecular Beam Epitaxy (MBE).

-         Understanding of growth mechanisms of thin films and nanostructures by Low Energy Electron Microscopy (LEEM) of surface kinetics of III-V semiconductors.

-         Development of computational methods for the analysis of experimental results to find insights into growth mechanisms.

-         Design, fabrication and characterisation of nanostructure-based devices.

The project will develop in the state-of-the-art research facilities of Cardiff University which include: Molecular Beam Epitaxy, Sputtering, Chemical Vapor Deposition, Reactive Ion Etching, Scanning Electron Microscopy, electron beam lithography, photolithography, X-Ray Diffraction, Atomic Force Microscopy, Low Energy Electron Microscopy, Low Energy Electron Diffraction.

 The project benefits from the proximity of the Compound Semiconductor Cluster in South Wales and industrial partners (e.g., IQE). The goal of the research group is to become a reference worldwide to facilitate the integration of materials, ultimately allowing them to fabricate more efficient sensors and communication devices enabling faster internet, safer cars, remote healthcare, etc.

Eligibility 

The typical academic requirement is a minimum of a 2:1 physics and astronomy or a relevant discipline.

Applicants whose first language is not English are normally expected to meet the minimum University requirements (e.g. 6.5 IELTS) (https://www.cardiff.ac.uk/study/international/english-language-requirements)

Applicants should apply to the Doctor of Philosophy in Physics and Astronomy.

Applicants should submit an application for postgraduate study via the Cardiff University webpages (https://www.cardiff.ac.uk/study/postgraduate/research/programmes/programme/physics-and-astronomy) including:

• your academic CV

• a personal statement/covering letter

• two references, at least one of which should be academic

• Your degree certificates and transcripts to date.

In the "Research Proposal" section of your application, please specify the project title and supervisors of this project.


Funding Notes

Please note that bench fees may be charged in addition to tuition fees for this project. This will be confirmed as part of any formal offer for this project.

References

C.X. Zheng, K. Hannikainen, Y.R. Niu, J. Tersoff, D. Gomez, J. Pereiro and D.E.Jesson, Mapping the surface phase diagram of GaAs(001) using droplet epitaxy, Phys. Rev. Mat. 3, 124603 (2019)
K. Hannikainen, D. Gomez, J. Pereiro, Y.R. Niu, and D.E. Jesson, Surface Phase Metastability during Langmuir Evaporation, Phys. Rev. Lett. 123, 186102 (2019)
Y. Niu, J.Pereiro, D. Gomez and D.E. Jesson, Ultramicroscopy, 200, 79-83 (2019).
M. Kesaria, D. Alshahrani, D. Kwan, E. Anyebe, V. Srivastava, Mat. Res. Bull. 142, 111424 (2021)

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