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Fabrication and characterization of AlGaN/GaN HEMTs as post-silicon semiconductor devices for power applications

About This PhD Project

Project Description

Queensland Microtechnology Facility at Griffith University, Australia, provides a leading research environment for the development of next generation SiC- and GaN-based power semiconductor devices. Further information about the facility can be found at:

PhD positions are available in alignment with our ongoing industrial funded project to develop a normally-off high electron mobility transistor (HEMT).

A good background in Semiconductor Physics and Devices is desirable.

Interested applicants should send their CV to Dr. Hamid Amini ().

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