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Flexible Electronic devices using Compound Semiconductors

School of Engineering

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Dr R Dahiya No more applications being accepted Funded PhD Project (Students Worldwide)

About the Project

James Watt PhD Scholarship Scheme

The School of Engineering at the University of Glasgow is seeking a highly motivated graduate to undertake an exciting 3.5 year PhD project “Flexible Electronic devices using Compound Semiconductors”
Dr Ravinder Dahiya and Prof Iain Thayne

Project Description
Future electronics will be bendable and conformable. Recent technological advances have enabled flexible electronic systems, mainly through exploring organic semiconductors, amorphous and polycrystalline silicon, and more recently also using single crystal silicon to meet high-performance requirements. With mobility in the range of 10–5 to 500 cm2V–1 s–1, these materials have been used to develop devices in thin-film formats on flexible substrates for applications like displays and electronic skin. However, applications with demanding high-frequency and ultra-low power consumption requirements, such as wireless communications in body-area sensor networks require materials with much higher mobilities. For such applications, compound semiconductors with lattice constant around 6.1 A (eg InAs, GaInSb) - the so called "6.1 semiconductors", with mobilities of greater than 10,000 cm2/Vs are the materials of choice. This project will investigate the suitability of various compound semiconductor devices as routes to high-frequency (1-10 GHz), low power (<1 mW) flexible electronics. The first activity of the project will be to demonstrate that the high mobility of 6.1 semiconductors can be retained when the materials are transferred to flexible substrates. Next, passive components such as transmission lines realised on 6.1 semiconductors transferred to flexible substrates will be explored at GHz frequencies. Subsequently, transistors and ultimately simple monolithic microwave integrated circuits such as low noise amplifiers, oscillators, switches and mixers, building blocks of ultra-low power radio systems, will be realised. The relative fragility of single crystalline compound semiconductors creates a number of fabrication challenges that must be overcome in order to realise high-speed, flexible transistors and integrated circuits.

The student will receive full training in advanced nanofabrication techniques including dry etch, metal and dielectric deposition, and techniques for printable electronics. In addition, training in high frequency test and measurement, and circuit design will be provided. Working alongside post-doctoral researchers, the student will integrate various process modules to demonstrate high performance devices.

As much of the work of the Glasgow team active in this area is strongly collaborative with leading global industrial and academic partners, the student will have the opportunity to showcase their talents to potential future employers.

The studentship is supported by the School, and it will cover tuition fees and provide a stipend of £13,726 per annum for 3.5 years.

How to apply
Application for this scholarship is made by using the online system at the following link for admission as a postgraduate research student to the admission team in the Recruitment and International Office:

It should be noted that this application is to gain admission to our PGR programme with the decision on this being based on your academic achievements.

The James Watt Scholarship Scheme is a competitive PhD Scholarship which requires the submission of an additional application subsequent to academic admission. More information can be found at

For an informal discussion or for further information on this project, potential applicants are encouraged to contact: Dr Ravinder Dahiya ([Email Address Removed])

Closing date – 31 March 2014
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