Applications are invited for a fully-funded 3.5 year PhD studentship to work on Fabrication and characterisation of monolithic on-chip integration of III-nitride photonics and electronics.
The studentship holder will work closely with a large number of collaborators from other Universities and industrial partners in order to achieve integrated devices combining III-nitrides and other III-Vs on patterned substrates, where the advanced epitaxial growth and novel device fabrication of the integrated devices are essential for the project. She/he will need to prepare and present results regularly, and will need to publish articles in high-profile journals, attend project progress meetings and international/domestic conferences.
The studentship is based within the Centre for GaN Materials and Devices led by Professor Tao Wang. With 30 members, two MOCVD systems and a large number of material characterisation systems and extensive device testing facilities of a high standard for the advanced research of III-nitrides, the Centre for GaN materials and Devices is one of the largest GaN research groups in the UK.
Academic requirements
This project will best suit a graduate in Physics, Materials or Electronic & Electrical Engineering with a strong background in semiconductor materials and physics. Candidates from a Physics department are particularly welcome. A first-degree of class 1 (preferred) or 2:1 class or its international equivalent is required.
Application and enquiries
Interested applicants should apply by submitting their CV and covering letter to Professor Tao Wang or Ms Katherine Greenacre https://gancentre.group.shef.ac.uk/contact-us/
For more information on post graduate research in EEE and the application process visit http://www.sheffield.ac.uk/eee/pgr. Informal enquiries can be addressed to Professor Tao Wang.
The studentship can start at the earliest opportunity.
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