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Fully-funded PhD studentship - III-nitride semiconductors and devices

  • Full or part time
  • Application Deadline
    Saturday, August 31, 2019
  • Funded PhD Project (European/UK Students Only)
    Funded PhD Project (European/UK Students Only)

Project Description

Applications are invited for a fully-funded 3.5 year PhD studentship to work on (1) Advanced MOVPE epitaxial growth of novel III-nitride semiconductors and advanced material characterisation (2) Advanced fabrication of the integrated devices combining III-nitride and other III-V semiconductors.

The studentship holder will work closely with a large number of collaborators from other Universities and industrial partners in order to achieve integrated devices combining III-nitrides and other III-Vs on patterned substrates, where the advanced epitaxial growth and novel device fabrication of the integrated devices are essential for the project. She/he will need to prepare and present results regularly, and will need to publish articles in high-profile journals, attend project progress meetings and international/domestic conferences.

The studentship is based within the Centre for GaN Materials and Devices led by Professor Tao Wang. With 30 members, two MOCVD systems and a large number of material characterisation systems and extensive device testing facilities of a high standard for the advanced research of III-nitrides, the Centre for GaN materials and Devices is one of the largest GaN research groups in the UK.
http://gancentre.group.shef.ac.uk/

This project will best suit a graduate in Physics, Materials or Electronic & Electrical Engineering with a strong background in semiconductor materials & physics. Candidates from a Physics department are particularly welcome. A first-degree of class 1 or 2:1 class or its international equivalent is required.

For more information on post graduate research in EEE and the application process visit http://www.sheffield.ac.uk/eee/pgr. Informal enquiries can be addressed to Professor Tao Wang.

The studentship can start at the earliest opportunity.

Funding Notes

The studentship is fully funded for 3.5 years and is open to UK/EU applicants who meet the University’s entrance requirements. Funding covers tuition fees and a tax-free living allowance at the current EPSRC rate or equivalent.

How good is research at University of Sheffield in Electrical and Electronic Engineering, Metallurgy and Materials?
Electronic and Electrical Engineering

FTE Category A staff submitted: 34.80

Research output data provided by the Research Excellence Framework (REF)

Click here to see the results for all UK universities

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