Gallium Nitride Semiconductor Electronic Devices

A 3.5-year fully funded PhD position is available in the Department of Electronic and Electrical Engineering, University of Sheffield. The aim for this project is to design and develop novel gallium nitride (GaN) electronic devices. GaN is poised to replace silicon and other III-V semiconductor materials in high power and high speed RF and power switching electronics as it offers significant advantages such as high breakdown field and low on-resistance. These advantages enable compact and high efficiency power supplies and amplifiers to be realised.

The research will involve device design and nanofabrication at University of Sheffield’s state-of-the art cleanroom facilities for high power RF and/or switching applications. The successful candidate will carry out device characterisation (high voltage/current, switching and RF measurements) and conduct simulations to model the device characteristics.

Applicants should have a first class or good 2:1 first degree (BEng/BSc/MEng) in electrical or electronic engineering.

Please contact Dr Kean Boon Lee (Email:[Email Address Removed]) for further details or discussions.