Multiphysics Characterisation of 0.15 μm InGaAs pHEMT Low-Noise Device for 5G Communication Applications
Reference Number: I4.0Com-SE-2018-1-PhD
Global research interests to satisfy the stringent requirements of the emerging 5G radio access technology (RAT) are increasing. Advanced RF, microwave and millimetre-wave receiver systems are required for 5G RAT applications including industry 4.0, ubiquitous coverage; internet of things; massive connectivity for machine-to-machine; ultra-low latency; connected vehicular transportation; and gigabit data rates.
Specific Requirements of the Project
• BEng (Hons) (2.1 and above); and/or
• MSc/MEng in Electrical & Electronic Engineering or Communication Engineering (merit and above).
Skills and Knowledge
• Electronic system design and characterisation (including schematic and PCB layout);
• Real-time embedded system design (including FPGAs);
• RF and Optical communication systems CAD tools;
• Use of text-based and graphical programming languages;
• Use of test/measurement and data acquisition equipment;
• Use of electronic system prototyping and evaluation boards; and
• Discipline-specific and generic technical report writing.
• Use of RF/microwave and digital design softwares (such as Advanced Design System, SystemVue, Vector Signal Analyser, IC CAP); and
• Design of RF/microwave, optical fibre and digital components (such as low-noise amplifier, power amplifier, mixer, FPGA, etc.).
Note: You will be working within a team of academics with a proven communication engineering expertise and training will be provided to any student who does not have the requisite skills for our project(s).
Project Aims and Objectives
The ambitious goals of 5G wireless technology can only be accomplished through an innovative assessment of the changes needed in the RF receiver system architecture to achieve higher data rates at the RF, microwave and millimetre-wave frequencies. Moreover, heat generation is a key challenge facing the RF components developers for 5G applications due to the massive multiple input multiple output systems and big data processing. Hence, there is a need for a judicious investigation and multiphysics characterisation (including EM and thermal simulations and validations) of active semiconductor devices process technologies for the RF receiver subsystem design for 5G communication applications. A new RF receiver circuit design paradigm for a sustainable and reliable broadband performance is needed.
The primary objective of this project is to carry out a multiphysics design, modelling, simulation and validation of a RF receiver for 5G communication applications using the low-noise pHEMT InGaAs process technology(s). This will encompass active semiconductor devices technologies and parameters investigations; RF receiver topology and system design characterisations; subsystems thermal analysis; distributed and discrete passive components qualification; and packaging constraints study.
Project is open to: Home/EU and overseas
Informal enquiries can be made to
Tel.: 0161 247 6229 email: [Email Address Removed]