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Nanophotonics with molecular beam epitaxy of semiconductor (In, Ga, Al)N nanowires heterostructures


Division of Computer, Electrical, Mathematical Sciences and Engineering (CEMSE)

Applications accepted all year round Funded PhD Project (Students Worldwide)

About the Project

KAUST photonics laboratory performs semiconductor device physics and optoelectronic device research as a lively symbiosis of optics and materials science. Our research aims at demonstration of optoelectronic devices and its application for future information technologies such as internet of things (IoT). Photonics laboratory is located in the very heart of the seaside of campus nearby Beacon.

Photonics laboratory has an expertise in the molecular beam epitaxy of group-III nitride semiconductors and for several years we have been extending self-organized growth of nanowires. Group-III nitrides are wide bandgap semiconductor and can be used for optical emitters and solar cell/photodetector in the visible/UV spectral range. On the basis, we have been pursuing for the monolithic integration of group-III nitride compounds on silicon substrate. As an even more extreme case of combining unconventional materials, we grow GaN nanowires on metal or amorphous glass substrates, which pave the way to exciting applications.
In this framework, we are seeking a highly motivated candidate to strengthen our team. You will grow samples by molecular beam epitaxy, carry out materials characterization, and potentially participate in device fabrication.

The successful candidate is expected to
- have a background of physics, materials science, electrical engineering, or a related field,
- have know-how on the physics and technology of semiconductor hetero- and quantum-structures,
- is able to work in a team and
- is able to carry out research in an interdisciplinary and international environment.

Applicants should send a one-page statement on your motivation, past research experience including CV to:

Prof. Boon S. Ooi
Electrical Engineering, KAUST


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