About the Project
Project overview: There is a great interest in integrating compound semiconductors either monolithically or heterogeneously on silicon to exploit their complementary properties. Particularly to exploit the direct bandgap of III-Vs for opto-electronic devices densely integrated with CMOS. However, lattice and thermal mismatch between materials makes epitaxial growth on silicon challenging. In this project we will address the challenges associated with the formation of defects and material growth in compound semiconductors such as III-Vs as well as their impact on device performance. Defects may be exploited in the development of novel devices, but more often we wish to mitigate their deteriorating impact on electro-optic device performance, by growth and materials optimization. The project combines experimental work at IBM with modelling and simulation efforts at University of Glasgow and Synopsis QuantumATK.
Candidates’ Profile: We are looking for three candidates with a master’s degree in physics, engineering or chemistry with knowledge in solid-state physics, materials science or electrical engineering with an outstanding academic record. The candidates must be fluent in English, have good communication skills and be able to work efficiently in a team and navigate in an international environment.
Duration: Fixed-Term (3 years)
Practical: A highly competitive salary package is offered in accordance with the MSCA rates in the respective countries. The mobility and qualifications eligibility rules of the MSCA program must be respected:
Mobility: At the date of recruitment by the host institute, the ESR must not have resided or carried out his/her main activity (work, studies, etc.) in the country of the beneficiary for more than 12 months in the 3 years immediately prior to his/her appointment. Short stays such as holidays are not taken into account.
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