This PhD project is based in the School of Engineering at the University of Glasgow and will focus on investigating the new ultra-wide bandgap material system, Gallium Oxide (Ga2O3) for the production of advanced high power and high frequency performance semiconductor devices.
Gallium Oxide is an exciting new ultra-wide bandgap material with the potential to deliver high power semiconductor devices and circuits for use in future electric vehicle technology, electricity distribution smart grids and space-based electrical systems. The aim of this project is to develop prototype, nanoscale transistor devices to explore the maximum high voltage and high frequency performance that can be achieved using this exciting new material system. Devices produced in the project will also be inspected at high and low temperatures and in radioactive environments to examine the technology’s suitability for operation in extreme environments that may be experienced in outer space.
The student on this project will produce prototype Gallium Oxide devices using the world leading facilities of the James Watt Nanofabrication Centre (http://www.jwnc.gla.ac.uk/) at the University of Glasgow. At the end of the project the student will have developed a diverse skillset and acquired experience in nanoscale lithography and processing, various microscopy and spectroscopy techniques, electrical characterization of semiconductor materials and devices, simulation and modelling, reliability testing and high power device measurements.
This project is suited to students with a background in electronic engineering, physics or chemistry. Please contact us for more information on appropriate experience for this project.
Eligibility: Masters qualification of equal or higher standard, in Physics, Chemistry or Engineering.0