PhD in Engineering - High sensitivity GaN based THz detectors for imaging applications

The School of Engineering of the University of Glasgow is seeking a highly motivated graduate to undertake an exciting 3.5-year PhD project to work on  fabrication and characterisation of GaN based THz detectors.

Application for this scholarship is made by using the online system at the following link:  https://www.gla.ac.uk/postgraduate/research/electronicsnanoscale/

Please note that this application is to gain admission to our PGR programme, and an offer of admission may be issued before a decision on this Scholarship is made. Candidates applying for this Scholarship will most likely have an interview/discussion with the supervisor before any decision is made. Potential candidates are encouraged to have an informal chat with the PhD supervisor before they apply.

The use of Terahertz (THz) detectors started gaining momentum in different applications including security, drugs and explosions detection, medical and industrial imaging and astronomy applications.  Field-effect transistors have been recently demonstrated to exhibit high sensitivity and high temperature operation.

On this project, highly sensitive GaN based THz detectors will be investigated for imaging applications in the 100 GHz – 1 THz frequency range. GaN HEMTs are interesting due to a number of beneficial physical properties, such as a high 2DEG sheet carrier density and an enhanced saturation velocity in combination with high robustness in breakdown voltage. It also exhibits radiation hardness to ionizing radiation which is of interest in particular with respect to space applications.

How to Apply: Please refer to the following website for details on how to apply:

http://www.gla.ac.uk/research/opportunities/howtoapplyforaresearchdegree/.