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PhD Studentship in Nano-electronics: Resistive-switching memory devices (ReRAM/FeRAM/memristor) and its application in neuromorphic and in-memory computing systems

Project Description

Project Description

Applications are invited for a PhD position in the Department of Electronics and Electrical Engineering, Liverpool John Moores University (LJMU).

This PhD position is for self-funded applicants only.

Eligibility: International and UK/EU candidates are welcome.

Qualification: Applicants should hold (or expect to get) a good (first class or upper second class) Honours undergraduate degree or a Master degree.

Location: LJMU (Liverpool, UK) and IMEC (Leuven, Belgium)

Duration: full-time, three years.

Applications are welcome all-year around.

This PhD project will be in collaboration with the world-leading memory device consortium at IMEC, Belgium, whose members include top companies such as Intel, Micron, Samsung, Toshiba and Western Digital. The student will have chances to work at IMEC together with scientists from the above mentioned organisations, providing excellent opportunities for career development.

The research will focus on developing and characterizing novel resistive-switching memory devices (ReRAM/FeRAM/memristor) and its application in neuromorphic and in-memory computing systems. The conductance in a resistive-switching device can be varied and memorized in thin semiconductor or metal oxide dielectric materials, which are easier to programme either fully or partially on/off and they exhibit random behaviour. These features make them ideally placed for novel neuromorphic and in-memory computing systems. This technology is expected to become one of the major driving forces to support the ICT industry for the next 20 years through a range of disruptive inventions in nanoelectronics, digital memory, bio-inspire machine learning, artificial intelligence (AI), low power reconfigurable in-memory computing, and Internet of things (IoT). It will drastically enhance not only the performance of non-volatile memories, but may also revolutionize the computing systems beyond the conventional Von Neumann architecture.

Professor Weidong Zhang and his group at LJMU have extensive research expertise into the use and characterisation of various resistive-switching memory devices, through close collaboration with IMEC in the past 10 years. The Microelectronics Research Group at LJMU has well established research record and advanced research facilities. In the latest UK’s official Research Excellence Framework (REF) 2014, LJMU is one of the top performing universities in Electrical and Electronic Engineering. 100% of our research outputs have been assessed as international excellence. Detailed information of the research group can be found in the following link:

We are seeking candidates with background and interest in the area of Electrical and Electronic Engineering, or physics/material.


Applicants should hold (or expect to get) a good (first class or upper second class) Honours undergraduate degree or a Master degree.

Application Procedure

To apply for the PhD studentship, please contact the supervisor, Prof. Weidong Zhang () to discuss the details of the PhD project and application, by sending the full CV, transcripts and a personal statement. You must clearly state your nationality, residence status, education, degree classification and contact details.

Contact details:

Prof Weidong Zhang
tel.: +44 151 231 2868

Supervisory Team:

Director of Studies: Prof Weidong Zhang

Funding Notes

Student self-funded.

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