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Quantum Devices Based on Disordered Metal Oxide Semiconductors

  • Full or part time
  • Application Deadline
    Friday, November 15, 2019
  • Funded PhD Project (Students Worldwide)
    Funded PhD Project (Students Worldwide)

Project Description

The Labram Group in the School of Electrical Engineering and Computer Science (EECS) at Oregon State University is looking to hire a full-time PhD student starting September 2020. You will be funded by the Labram Group and will work on experimental projects in the development of next-generation flexible electronics. Candidates must have received an undergraduate degree in electrical engineering, materials science, physics, or a related discipline by 21st September 2020.

The application deadline for Oregon State University is 15th December 2019, but pre-screening of candidates will take place before this date. Interested candidates should use the from below to submit a full CV / resume, along with a brief statement on research interests (roughly half a page) by 15th November 2019. Professor Labram will inform candidates by 30th November 2019, whether he will support their application. Informal inquires can be made via .

Oregon State University is located in Corvallis, in the beautiful Pacific-Northwest of the United States. Further information can be found below:
• The Labram Group: http://web.engr.oregonstate.edu/~labramj/.
• Oregon State University: http://oregonstate.edu/.
• Information about Corvallis: https://visitcorvallis.com/.

The future of electronics will be defined by a diversification in its physical form, enabling devices to be cheap, ubiquitous and disposable. This vision includes conformal, stretchable, transparent and bio-compatible electronics embedded into our natural surroundings, present whenever needed and enabled by simple and effortless interactions. If one were able to print circuits, at a comparable cost to printing a newspaper, then it is conceivable that transforming normal objects into smart-objects would be as routine as affixing a sticker.

In this project you will be developing devices based on ultra-thin (<10nm) layers of disordered metal oxide semiconductors. Despite traveling in disordered systems, charge carriers in metal oxide semiconductors have been shown to possess quantized energy states when confined to 2-dimensions. By studying and exploiting this phenomenon, you will be developing new and novel electronic devices, with a range of previously unobserved capabilities.

Funding Notes

The project is suitable for candidates who have, or expect to obtain, at least a 2:1-class degree (or equivalent) in electrical engineering, materials science, physics, or a related discipline.

References

Metal oxide semiconductor thin-film transistors for flexible electronics, Petti et. al. APR, 3 2016, 021303, https://aip.scitation.org/doi/10.1063/1.4953034

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