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About the Project
Single electronic and nuclear spins have been one of the most successful platforms to demonstrate basic quantum networking protocols, such as long-distance entanglement and quantum teleportation. While most of this work has relied on spins associated with the nitrogen-vacancy (NV) centre in diamond, recent results has shown that alternative centres in SiC exhibit similar, if not superior, properties [e.g. Science Advances 8, eabm5912 (2022)].
The PhD project. The goal of this PhD project is to demonstrate seminal quantum networking primitives using vanadium centres in SiC. Our preliminary results, within the European consortium QuanTELCO (https://quantelco.univie.ac.at/), show that vanadium centres emit directly in the telecom O-band and are very reproducible and insensitive to noise. One big advantage of silicon carbide, compared to diamond, is the possibility to create novel quantum opto-electronic devices integrating spintronic, electronic and photonic functionalities.
The PhD candidate would be joining an active team on the topic, to demonstrate spin/photon interfacing at telecom wavelength and long-term storage of quantum states on nuclear spins. The student will be working with post-docs in the lab and collaborate with external partners across the UK and Europe.
The group. The proposed research will be carried out in the Quantum Photonics Lab at Heriot-Watt University (Edinburgh, UK), under the supervision of Prof Cristian Bonato and Dr Christiaan Bekker. The Quantum Photonics Lab works on quantum devices in different material platforms, such as diamond, SiC, “beyond graphene” 2D materials, rare-earth doped crystals and III-V semiconductors. The lab hosts state-of-the-art facilities, including several cryostats, superconducting single-photon detectors, tuneable lasers and radio-frequency equipment for high-fidelity spin manipulation. More information can be found on our website (https://qpl.eps.hw.ac.uk/). Please contact Cristian Bonato (c.bonato@hw.ac.uk) as soon as possible for additional information.
Funding Notes
References
M. Widmann et al, “Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device”, Nanoletters 19, 7173 (2019)
R. Nagy et al, “High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide”, Nature Communications 10, 1 (2019)
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