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Random laser with III-V semiconductor nanowires

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  • Full or part time
    Dr SS Oh
    Dr Q Li
    Prof D Huffaker
  • Application Deadline
    No more applications being accepted
  • Competition Funded PhD Project (European/UK Students Only)
    Competition Funded PhD Project (European/UK Students Only)

Project Description

Semiconductor lasers are used extensively in our life for example optical telecommunications, bar code readers, CD players and the camera systems in mobile devices. Beside commercial applications, the well-established semiconductor theory and advanced fabrication technologies provide an excellent platform to study dynamic effect in chaotic random lasers. Recently, the main supervisor and his collaborators in Yale University and Imperial College London showed that the stability of semiconductor lasers can be improved by adopting chaotic cavity or randomising the refractive index of the cavity [1]. The suppressed instabilities using a chaotic or random cavity requires further theoretical studies for a complete understanding of the mechanism. However, it is a challenging task because multiple nonlinear effects should be considered and the numerical simulation processes can be heavily loaded due to complex material gain. Therefore, it is vital to develop an appropriate numerical model to predict the dynamic gain effect for complete understanding and new applications.
In this project, the student will be working on both theoretical modelling and experimental demonstration. In theoretical study, the student will model nonlinear effects (spatial hole burning, lens effect) in optical cavities and dielectric rod arrays and design an III-V nanowire array laser with a randomly perturbed lattice. This will be done via analytical approach and numerical methods such as the coupled mode theory, finite-difference time-domain model and finite-element method. In the experimental demonstration, the student will fabricate III-V semiconductor nanowire array using selective area epitaxy with MOVPE equipment in Ser Cymru group. The fabricated lasers will be characterised using the micro photoluminescent setup. This project can be successfully completed in 3.5 years (0.5 year: literature review, study on semiconductor laser physics, 1.5 year: simulation on nonlinear effect and design of laser, 2 years (0.5 year overlap): sample fabrication and characterisation).

1. Stefan Bittner, Stefano Guazzotti, Yongquan Zeng, Xiaonan Hu, Hasan Yılmaz, Kyungduk Kim, Sang Soon Oh, Qi Jie Wang, Ortwin Hess, Hui Cao, “Suppressing spatiotemporal lasing instabilities with wave-chaotic microcavities,” Science, 361 (9), 1225, 2018.

Funding Notes

Full UK/EU tuition fees plus stipend matching UKRI Minimum.

Full awards are open to UK Nationals and EU students who meet UK residency requirements. To be eligible for the full award, EU Nationals must have been in the UK for at least three years prior to the start of the course including for full-time education.

A small number of awards may also be made available to EU Nationals who do not meet the above residency requirement, provided they have been ordinarily resident in the EU for at least three years before the start of their proposed programme of study

References

1. Stefan Bittner, Stefano Guazzotti, Yongquan Zeng, Xiaonan Hu, Hasan Yılmaz, Kyungduk Kim, Sang Soon Oh, Qi Jie Wang, Ortwin Hess, Hui Cao, “Suppressing spatiotemporal lasing instabilities with wave-chaotic microcavities,” Science, 361 (9), 1225, 2018.
2. Y. Han, W. K. Ng, C. Ma, Q. Li, S. Zhu, C. Chan, K. W. Ng, S. Lennon, R. A. Taylor, K.S. Wong, K.M. Lau, “Room-temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands,” Optica 5 (8), 918-923, 2018
3. H. Kim, A. C. Farrell, P. Senanayake, W. J. Lee and D. L. Huffaker “Monolithically Integrated
InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links,”
Nano Lett. 16, 1833, 2016

How good is research at Cardiff University in Physics?

FTE Category A staff submitted: 19.50

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