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Selective epitaxial growth of Silicon Carbide thin film materials

Department of Physics

Applications accepted all year round Funded PhD Project (UK Students Only)

About the Project

This PhD project is an exciting opportunity to be involved in innovative and pioneering research on selective epitaxial growth of silicon carbide (SiC) semiconductor material. It is a joint project with one of our industrial partners. Selective epitaxy physics of SiC is expected to be researched and understood. The project is based on recent ground breaking work demonstrated SiC epitaxy at low-temperature and leading to high impact research. The experimental information will add greatly to knowledge of materials science and condensed matter physics; and enable wide range of electronic, photonic and sensor device architectures. Epitaxial growth for this research will be carried out at Warwick University, using unique to UK academia industrial type Reduced Pressure Chemical Vapour Deposition equipment upgraded beyond state of the art. Patterned substrates for the selective epitaxy will be fabricated in house and supplied by industrial and academic collaborators. Characterisation of grown materials will be carried out in-house using a range of sate of the art equipment and techniques including XTEM, SEM, AFM, HR-XRD, XRR, Raman spectroscopy, Spectroscopic Ellipsometry, FTIR, Hall effect and resistivity, etc. The project will involve collaboration with scientists from national and international universities as well as with research groups from leading semiconductor companies. Successful outcome from the project would lead to high impact publications in international scientific journals, creation of IP with enormous impact potential and application of developed selective epitaxy of SiC in a variety of power and RF electronic devices, and sensors using capabilities of academic and industrial collaborators.

The successful PhD candidate will work at the cutting edge of semiconductor research and collaborate closely with experts across academia and industry. The skills and experience learned throughout the PhD will make the candidate an expert in epitaxial growth, metrology and device fabrication. These skills can be transferred across the semiconductor and broader condensed matter fields.

Funding Notes

A full 3.5 year studentship for UK students (fees and maintenance) is available, and may be available to outstanding EU applicants. Candidates should hold or expect to hold a 1st (or high 2.1) in Physics or related subject area. See View Website for further details.

The Physics department is proud to be an IOP Juno Champion and a winner of an Athena Swan Silver Award, reflecting our commitment to equal opportunity and to fostering an environment in which all can excel.

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