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SiC-based Schottky diodes and power MOSFETs are becoming the semiconductor devices of choice in modern energy-conversion systems. The semiconductor-device team at Griffith University is commercialising their patented SiC Schottky diode, which features simplified fabrication process and enhanced surge-current capability. The next step is the development of SiC power MOSFETs, which will also feature simplified processing and improved performance. The research in this Ph.D. project will support these activities by providing better understanding of the impact of various changes in the device structure and in processing steps and parameters. The Ph.D. student will have the opportunity to be involved in design, fabrication, and characterization of various SiC-based test MOSFETs and will have access to the equipment at Queensland Microtechnology Facility, located at Nathan campus of Griffith university. The main aim of the Ph.D. research will be to create results that can be published in the leading journals in this area, as well as presented at the leading conferences.
Funding Notes
Location
It is expected that the PhD candidate be based in-person on Griffith’s Nathan campus in Brisbane, Queensland, Australia, even though some travel to Griffith’s Gold Coast campus may be required.
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