This project represents an excellent opportunity to break through the limitations of current state-of-the-art power device technology. A transition from the conventional scheme of manufacturing electronic circuits using discrete components to that of a fully integrated power chip is a new engineering requirement. This technology is expected to take advantage of the high-frequency power switching benefits offered by Gallium Nitride (GaN) and can offer system-level performance and cost benefits in existing and emerging applications such as the Internet of Things, communications, photonics, radar, aerospace, automotive and data centres.
This project aims to achieve the conceptual design of a novel power electronic device based on the emerging technologies using GaN material. It will make use of complex computational and modelling techniques leading to the design, simulation and verification of the new device. The initial specific target of the novel concept will be a bi-directional power switch - the key element of a matrix power converter. Following appropriate algorithms and using specialised software to model and simulate the emerging novel design, in its final stages the work will result in a model that can be verified further by industry through prototype production. The project will also benefit from informal collaboration through supervisor contacts with an internationally-leading team in this field at the University of Sheffield.
If you wish to be considered for this project, you will need to apply for our Computer Science PhD. In the section of the application form entitled 'Outline research proposal', please quote the above title and include a research proposal.