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Tunable THz laser source


Project Description

A fully tunable and efficient source of THz radiation is required for a large number of security and medical applications. This project will involve the design, fabrication and characterisation of such a source, based on the non-linear optical process of difference frequency generation in an integrated semiconductor laser structure.
The PhD will push the boundaries of quantum dot active region design for lasing and non-linear optics, optical coupling design to maximise tunability and introduce new concepts and fabrication strategies for compound semiconductors coupled to Si, which is practically dispersionless in the THz.
The project will be underpinned by a good understanding of optical and semiconductor
physics and will lead to the further understanding of the physics of light-matter
interactions, ultrafast laser physics and characterisation techniques. This is an opportunity to exploit and develop desirable skills in experimental physics and in semiconductor device fabrication. The project background, and the materials and device development which form the core of the programme also has strong relevance to a number of other highly topical areas.

The student will integrate with the EPSRC funded Future Compound Semiconductor Manufacturing Hub (CS Hub) research team and the Astronomy Instrumentation Group (AIG), comprising post-doctoral research associates, technicians and senior staff at Cardiff University, as well as making use of Institute for Compound Semiconductors (ICS) facilities.

The project will follow a flexible timeline with completion feasible within 3.5 years (including 0.5 year contingency with the first year including a literature study and the development of suitable experimental and computational skills. The remainder of the PhD will include device development, device demonstrations and assessment and completion of the thesis. The student will integrate with the CS Hub research team comprising post-doctoral research associates, technicians and senior staff at Cardiff University, and utilise Institute for Compound Semiconductors (ICS) facilities.
Candidates should have a strong background and interest in Optics/Photonics and Semiconductor Physics

Funding Notes

Full UK/EU tuition fees plus stipend matching UKRI Minimum.

Full awards are open to UK Nationals and EU students who meet UK residency requirements. To be eligible for the full award, EU Nationals must have been in the UK for at least three years prior to the start of the course including for full-time education.

A small number of awards may also be made available to EU Nationals who do not meet the above residency requirement, provided they have been ordinarily resident in the EU for at least three years before the start of their proposed programme of study

References

(1) P. Finch, P. Blood, P.M. Smowton, A. Sobiesierski, R.M. Gwilliam, I. O'Driscoll. “Femtosecond pulse generation in passively mode locked InAs quantum dot lasers”, Applied Physics Letters, 103(13), 131109, DOI: 10.1063/1.4822433 (2013)
(2) S. Shutts, P.M. Smowton, A.B. Krysa. “Dual-wavelength InP quantum dot lasers”, Applied Physics Letters, 104, 241106; http://dx.doi.org/10.1063/1.4883857. (2014)
(3) Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S.N. Elliott, A. Sobiesierski, A. Seeds, I. Ross, P.M. Smowton, H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon.” Nature Photonics 10, pp. 307-311. (2016) (10.1038/nphoton.2016.21)

How good is research at Cardiff University in Physics?

FTE Category A staff submitted: 19.50

Research output data provided by the Research Excellence Framework (REF)

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