Wide bandgap semiconductors have advanced electrical properties compared to Silicon. When utilised in existing and new power electronic systems, a step improvement in terms of efficiency, power density, operating limits, and functionality can be achieved. For high power applications such as the smart grid, full electric ships, drives for electric trains or specialised high-power instruments, more than 10kV and hundreds or thousands of amperes need to be handled. For that, Silicon Carbide bipolar devices offer distinct advantages over any other semiconductor device. However, it is still a challenge to design those devices scalable to handle the required high current, whilst also supporting such high voltages. It is also a challenge to package such devices with materials and packages without further compromising the device operation.
Applicants are invited to undertake a 3-year PhD programme which will investigate high power SiC bipolar devices and their package. The aim would be to design devices and packages which would allow operation at 10kV, 100A at high temperature with high reliability. The successful candidate will be based with the Department of Electrical and Electronic Engineering at University of Nottingham. The studentship will cover PhD tuition fees and a tax-free stipend for three years (£15,009 a year). Due to funding restrictions this studentship is only available to UK/EU students. Exceptional international students can also be accepted, with the scholarship covering the fees only.
The successful candidate is expected to have First or upper second class degree in Electrical, Electronics or Physics background.
Please contact Assistant Prof. Neo Lophitis for further information. Email: [email protected]
When applying for this studentship, please include the reference number (beginning ENG and supervisors name) within the personal statement section of the application. This will help in ensuring your application is sent directly to the academic advertising the studentship.