Two-dimensional semiconductors, which can be easily combined to create entirely new materials, offer completely unique opportunities to design the electronic and optical properties of individual particles at the quantum level.
You will explore the limits of ultrashort pulse generation in electrically-pumped semiconductor lasers and develop novel techniques to push their characteristics further (e.g.
Optical cavities (nanoantennas, micro-ring resonators, Fabry-Perot nanocavities, etc.) immersed in an index-near-zero environment will be modelled, fabricated, and characterised.
You will develop new techniques for the ultrafast optical characterisation of semiconductor materials under realistic laser/amplifier operating conditions, generating new knowledge essential for the development of novel ultrafast semiconductor lasers and amplifiers.
Single-Photon and photon-pair correlated imaging has opened up a number of exciting possibilities for three-dimensional imaging in extreme environments such as imaging through obscurants (eg fog, smoke), and underwater.
The goal of this project is to develop the key components of a quantum repeater based on individual electronic and nuclear spins, interfaced with photons close to telecom wavelength.
Design and characterisation of different artificial materials for the design of ultra-fast tuneable photonics devices. Giant epsilon-near-zero nonlinearities are targeted to allow subwavelength manipulation of light in both classic and quantum regime.
The Department of Engineering at Lancaster University is pleased to announce the availability of a fully funded PhD studentship in Electronic Engineering, to commence in January 2019.
Demand for sensors is considered to be the next growth engine and core business for semiconductor industry. Semiconductor sensors market is expected to reach $432 billion by 2020, with an estimated rapid annual growth rate of >10%.
