Uncovering and harnessing new electronic properties of silicon nanodevices by controlling both valley and spin

In addition to spin, electrons in silicon possess another degree-of-freedom due to the degeneracy of the conduction band valleys. This project aims to uncover and harness new electronic properties of silicon nanodevices by controlling both valley and spin.

Silicon lies at the very core of modern information and communication technology. This means that on one hand, the technology is highly developed and enables exquisite control over physics experiments at the nanoscale. On the other hand, new physical insights and device concepts can potentially have enormous impact through their applications in ubiquitous devices.

By using an out-of-plane electric field on silicon-on-insulator devices, we are able to control the size of the valley-splitting and valley-polarise electrons in the steady state [1]. The project aims to exploit this control in order to explore spin-valley physics of the two-dimensional electron system.

The project will form part of on-going international collaboration with scientists in France and Japan from both industry and academia. The student will belong to the Nanoscience group at Bath and enjoy being part of a vibrant research community with a breadth of opportunities.