Tunable THz laser source - design, fabrication and characterisation based on the non-linear optical process of difference frequency generation in an integrated semiconductor laser structure.

A fully tunable and efficient source of THz radiation is required for a large number of security and medical applications. This project will involve the design, fabrication and characterisation of such a source based on the non-linear optical process of difference frequency generation in an integrated semiconductor laser structure.
The PhD will push the boundaries of quantum dot active region design for lasing and non-linear optics, optical coupling design to maximise tunability and introduce new concepts and fabrication strategies for compound semiconductors coupled to Si, which is practically dispersionless in the THz.
The work will be underpinned by a good understanding of optical and semiconductor
physics and will lead to the further understanding of the physics of light-matter
interactions, ultrafast laser physics and characterisation techniques. There will be the opportunity to exploit and develop skills in experimental physics and in semiconductor device fabrication. This background and the materials and device development which forms the core of the programme also has strong relevance to a number of other highly topical areas.

The postgraduate student will work closely with other researchers in Cardiff working on the ESPRC Manufacturing Hub in Compound Semiconductors

Candidates are expected to have a strong background and interest in Optics/Photonics and Semiconductor Physics.

To discuss this project further, please contact:
Prof Peter Smowton
Email: [Email Address Removed]

This project will start on 01/10/2018


Please be aware that Cardiff University reserves the right to close this vacancy early should sufficient applications be received.