The University of Bath has been active in the field of Nitride Semiconductors for over 10 years. It has the facilities for the growth, fabrication and characterisation of optoelectronic devices based on the group III nitrides, such as gallium nitride, aluminium nitride and indium nitride. In particular it has extensive experience of incorporating nanostructures into the growth and fabrication processes through advanced nanolithography techniques.
Why would someone want to do this?
The University of Bath has recently been awarded, in collaboration with the Universities of Bristol, Sheffield and Strathclyde, a prestigious 5-year research grant to work with industry and international research teams in exploiting nanostructuring to enhance the performance of semiconductor devices. The student can choose to specialise in areas such as semiconductor nanofabrication, semiconductor materials growth, optical modelling, device characterisation.
Please see www.ManuGaN.org for more details of the collaborative project.
Which Research centre?
The Department’s ‘Wide Band-gap Semiconductor Group’ are based within the Centre of Advanced Sensor Technologies in the Department of Electrical and Electronic Engineering and part of the new Centre for Nanoscience and Nanotechnology
Applicants should have or expect to achieve at least an upper second class Honours degree (or equivalent) in Physics, Materials Science, Electronic Engineering or a related discipline.
The successful applicant should aim to start by 3rd October 2016.
For an informal discussion about the project, please contact Dr Philip Shields ([email protected]
Home/EU award: Provides full tuition fee, £1000 per year Training Support Grant and Stipend (£14,296 2016-7 rate).
We welcome applications from self-funded students at all times.