PhD Studentship: Resistive Random Access Memory
Resistive random access memory is a dense non-volatile memory in which data is stored through the formation and breaking of a conductive filament within an insulator. Such memories will be part of future energy efficient computer architectures either as classical binary storage or in neuromorphic computing. Two types of resistive memories exist depending on whether the filament is metallic or based on oxygen vacancies. The study of the behaviour of both kind of devices under bombardment with individual ions and neutrons will lead to both fundamental understanding of the origin of the switching mechanism as well as confidence in the reliability of its operation under harsh environments.
Applications are invited for this 4-year EPSRC Industrial CASE PhD studentship in collaboration with AWE. The studentships will be based in the Nano Research Group within Electronics and Computer Science (ECS). The research project will use the state-of-the art cleanroom Facilities of the Southampton Nanofabrication Centre (http://www.southampton-nanofab.com/) as starting point for the fabrication, in-situ characterisation, and measurement of electronic properties of resistive memory.
Applications would be welcome from candidates holding 1st class degrees in physics, chemistry, materials science, or electronic engineering. Experimental skills are essential. This PhD studentship, includes an enhanced annual stipend (£18,000.00/year), industrial placement, and generous annual allowance to cover attendance at international conferences. Due to funding restrictions, this post is open to UK citizens only. Security Clearance procedure might be part of the application process.
4 year EPSRC Industrial CASE Ph.D. studentship. Funding: stipend of £18,000.00/year and tuition fees.