Germanium Laser Development for Silicon Photonics
Germanium (Ge) is an indirect band gap semiconductor, which cannot emit light efficiently in bulk. However, by applying tensile strain to Ge, the efficiency significantly improves, and we can expect stimulated emissions from Ge. Ge is a group-IV material, which is the same as silicon (Si). Therefore, if we can successfully develop, Ge lasers will be integrated onto a Si chip together with electronic circuits. In fact, Si photonics is revolutionizing the optical communications, and a monolithic laser is the final missing component to realize a full convergence of electronics and photonics. For more details on this subject, please refer to our review article [S. Saito, et al., Front. Mater. 1, 15 (2014), http://dx.doi.org/10.3389/fmats.2014.00015].
In this PhD project, we will develop Ge lasers by using various Quantum structures like quantum wells, fins, nano-wires, and quantum dots. Fabrications will be performed in Southampton Nanofabrication Centre in the University of Southampton, one of the best clean room complexes in UK. This project is in collaboration with various researchers and investigators in the University of Southampton, where various Si photonics projects funded by EPSRC are running. This project is also in collaboration with an industrial partner, Hitachi, and an international partner, the University of Tokyo. You can collaborate with top notched researchers in these organizations.
Previous knowledge of a semiconductor device is not required, but a candidate should be highly motivated to challenge this difficult topic. Nice communication skills are required to work together with engineers, researchers, and academic staffs.
Start Date: October 2016 (or as soon as the successful candidate is available)
Due to funding restrictions, this fully-funded studentship is available to UK students only.
Please apply as soon as possible, otherwise the position may be filled with a strong student, who applies early.