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A 3.5-year PhD studentship in modelling defects at SiC/insulator interfaces

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  • Full or part time
    Prof A Shluger
  • Application Deadline
    No more applications being accepted
  • Competition Funded PhD Project (European/UK Students Only)
    Competition Funded PhD Project (European/UK Students Only)

Project Description

Application are invited for a 3.5 years PhD position in the group of Prof. Alexander Shluger at the Department of Physics and Astronomy, University College London in collaboration with Infineon Technology, Austria (IFAT) to model the effects of defects at SiC/insulator interfaces on the performance of power field-effect-transistors (FETs).

Research at UCL is focused on modelling defects in semiconductors and insulators and at interfaces. IFAT is concerned with the reliability of power FETs and similar devices based on semiconducting crystals. The quality and reliability of FETs based on silicon carbide (SiC) strongly depend on the defects present in SiC, in the insulator and at the metal-semiconductor interface. These defects are also considered as prospective candidates for quantum computation.

This PhD project will use computational modelling to predict ways of improving materials and deposition techniques for SiC growth processes to minimize defect influences and improve the performance of SiC-based devices. This will include using the existing and developing novel methods for modelling the structure and properties SiC/insulator/metal interfaces based on atomistic modelling and Density Functional Theory. Particular emphasis will be on comparing with the experimental data on electron paramagnetic resonance, high resolution transmission electron microscopy and electrical measurements at IFAT.

The PhD training and research will be carried out within the Centre for Doctoral Training in Molecular Modelling and Materials Science and the London Thomas Young Centre.

Evaluation of applications will commence immediately, and will continue until the position is filled. Applications and inquiries regarding the vacancy can be made to [email protected]   (Tel: +44 (0)20 7679 1312).

Funding Notes

We are looking for a highly motivated candidate, with a strong background in materials science, chemistry, physics with at least a 2.1 honours degree. The applicant must show creative and innovative experience and is able to work independently and collaboratively.

Due to funding restrictions, this studentship is only open to applicants from the UK and EU, who have been resident in the UK for at least 3 years preceding their start on the programme or have indefinite leave to remain in the UK.

How good is research at University College London in Chemistry?

FTE Category A staff submitted: 62.00

Research output data provided by the Research Excellence Framework (REF)

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