Multiphysics Characterisation of 0.15μm InGaAs pHEMT Low-Noise Device for 5G Communication Applications

Global research interests to satisfy the stringent requirements of the emerging 5G radio access technology (RAT) are increasing. Advanced RF, microwave and millimetre-wave receiver systems are required for 5G RAT applications including ubiquitous coverage; internet of things; massive connectivity for machine-to-machine; ultra-low latency; connected vehicular transportation; and gigabit data rates.

The ambitious goals of 5G wireless technology can only be accomplished through an innovative assessment of the changes needed in the RF receiver system architecture to achieve higher data rates at the RF, microwave and millimetre-wave frequencies. Moreover, heat generation is a key challenge facing the RF components developers for 5G applications due to the massive multiple input multiple output systems and big data processing. Hence, there is a need for a judicious investigation and multiphysics characterisation (including EM and thermal simulations and validations) of active semiconductor devices process technologies for the RF receiver subsystem design for 5G communication applications. A new RF receiver circuit design paradigm for a sustainable and reliable broadband performance is needed.

The primary objective of this project is to carry out a multiphysics design, modelling, simulation and validation of a RF receiver for 5G communication applications using the low-noise pHEMT InGaAs process technology(s). This will encompass active semiconductor devices technologies and parameters investigations; RF receiver topology and system design characterisations; subsystems thermal analysis; distributed and discrete passive components qualification; and packaging constraints study.