Prof R Hogg, Dr D Maclaren
No more applications being accepted
Funded PhD Project (European/UK Students Only)
About the Project
Semiconductor lasers are the engines for photonics, and are at the heart of our world, allowing us to communicate, store/read data, print, display, cut, weld, sense, and image. Future applications for such lasers are ever expanding and promise society changing impact.
The ultimate control in the operating characteristics of advanced semiconductor devices and photonic integrated circuit relies upon the precise control of the flow of both electrons and photons. This is achieved by the formation of structurally complex epitaxial structures where alloy compositions and doping are precisely controlled in all three dimensions. This is achieved by repeated processes involving epitaxial and fabrication steps
This PhD project aims to realise new types of semiconductor laser devices (distributed feedback (DFB) lasers and photonic crystal surface emitting lasers (PCSELs)) for a range of applications through the development of new epitaxial processes and device designs. This will be achieved in strong collaboration with industrial partners (CST Global Ltd). The successful candidate will be based at the industrial partners premises in Hamilton, interacting strongly with his supervisory team in Engineering and Physics.
The candidate will have a strong first degree in physics, chemistry, materials, electronic engineering, or related disciplines.
The successful candidate will develop skills and experience in;
- Semiconductor device manufacturing processes – epitaxy and device fabrication.
- Advanced electron microscopy of semiconductor structures.
- Industrial manufacturing processes and systems in addition to present and future commercial needs.
For more details on how to apply, please see the ’Apply Online’ link above/below.
Funding Notes
Funding is available to cover tuition fees for UK/EU applicants, as well as paying a stipend at the Research Council rate (estimated £14,553 for Session 2017-18) for four years.